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| automotive grade pd - 97792 description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features com- bine to make this design an extremely efficient and reliable device for use in automotive applica- tions and a wide variety of other applications. AUIRFR4292 auirfu4292 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ features advanced process technology low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * hexfet ? power mosfet s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss 250v r ds(on) typ. 275m ? max. 345m ? gate drain source d-pak AUIRFR4292 i-pak auirfu4292 parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 1.5 c/w r ? ja junction-to-ambient (pcb mount) ??? 50 r ? ja junction-to-ambient ??? 110 max. 9.3 6.6 40 97 130 see fig.12a, 12b, 15, 16 -55 to + 175 300 100 0.67 20 06/18/12 www.irf.com 1 free datasheet http:///
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 8.1mh r g = 50 ? , i as = 5.6a, v gs =10v. part not recommended for use above this value. pulse width ? 1.0ms; duty cycle ? 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. starting t j = 25c, l = 8.1mh, r g = 50 ? , i as = 5.6a, v gs =10v. when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ? s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 250 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.31 ??? v/c r ds(on) static drain-to-source on-resistance ??? 275 345 m ? a ??? ??? 250 i gs s gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 13 20 q gs gate-to-source charge ??? 4.7 ??? nc q gd gate-to-drain ("miller") charge ??? 4.8 ??? t d(on) turn-on delay time ??? 11 ??? t r rise time ???15??? t d(off) turn-off delay time ???16???ns t f fall time ??? 8.4 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 705 ??? c os s output capacitance ??? 71 ??? c rs s reverse transfer capacitance ??? 20 ??? pf c os s output capacitance ??? 600 ??? c os s output capacitance ??? 26 ??? c os s eff. effective output capacitance ??? 65 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 9.3 (body diode) a i sm pulsed source current ??? ??? 40 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 110 165 ns q rr reverse recovery charge ??? 390 585 nc t on forward turn-on time intrins ic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 0v, v ds = 200v, ? = 1.0mhz v gs = 0v, v ds = 0v to 200v v gs = 10v v dd = 250v i d = 5.6a r g = 15 ? di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 5.6a v ds = v gs , i d = 50 a v ds = 250v, v gs = 0v v ds = 250v, v gs = 0v, t j = 125c conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 5.6a, v gs = 0v t j = 25c, i f = 5.6a, v dd = 125v v ds = 50v, i d = 5.6a i d = 5.6a v ds = 125v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v free datasheet http:/// www.irf.com 3 qualification information ? d-pak msl1 i-pak n/a qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ?? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m1b (+/- 100v) ?? aec-q101-002 human body model class h1a (+/- 500v) ?? aec-q101-001 free datasheet http:/// 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.5v 7.0v 6.5v 6.0v bottom 5.5v ? 60 s pulse width tj = 25c 5.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.5v ? 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.5v 7.0v 6.5v 6.0v bottom 5.5v 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v ? 60 s pulse width 0123456 i d ,drain-to-source current (a) 0 2 4 6 8 10 12 14 16 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380 s pulse width free datasheet http:/// www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 4 6 8 1012141618 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v v ds = 50v i d = 5.6a 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc free datasheet http:/// 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 9.3a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc free datasheet http:/// www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - !" fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.0a 2.2a bottom 5.6a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a free datasheet http:/// 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 5.6a free datasheet http:/// www.irf.com 9 fig 17. #$% & ' ( for n-channel hexfet power mosfets ????? ???? ???? p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ) ! " #$% # % ) + - + + + - - - ??? ! ??? " #$## ??? % & & ??? #$##' $ v ds 90% 10% v gs t d(on) t r t d(off) t f ( ) ???? * % ??????? & ' + - fig 18a. switching time test circuit fig 18b. switching time waveforms free datasheet http:/// 10 www.irf.com # * + + ( ! " % ( ,-, ..-. $.$ /-/ 0+1 free datasheet http:/// www.irf.com 11 # # # * + + ( ! " % ( ,-, ..-. $.$ /-/ 0+1 free datasheet http:/// 12 www.irf.com $ % tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch free datasheet http:/// www.irf.com 13 ordering information base part number package type standard pack complete part number form quantity AUIRFR4292 dpak tube 75 AUIRFR4292 tape and reel 2000 AUIRFR4292tr tape and reel left 3000 AUIRFR4292trl tape and reel right 3000 AUIRFR4292trr auirfu4292 ipak tube 75 auirfu4292 free datasheet http:/// 14 www.irf.com ! " # $ % # $ $ $ # $ # " " # & '(!) * # " + ( , - - " . +" + * " " /* "# + $ " " % . 0 $ # + " " $ $ $ 1 # " , # " " # # * " # # " $$ 0 " "$ $ " , " " 2 3" " 0 $ 3" " $ " $ $ $ 1 $ $ $* $ " $ " "$" , " 0 $# 4" " " 5 ( " 5( !2 $ 5( " + " "$ 3" " " 5( "1 $ + " $ " 3" - " " " + # # " 24.267898 + '(!) 3" $ " "1 # $ " + 1 0 ' / ( 2 ' ' ( ) * $ +," - ./' 0 +"+12' " free datasheet http:/// |
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